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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Sustaining Voltage-- : VCEO(SUS) = 80 V *DC Current Gain-- : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A *Complement to Type MJE172 MJE182 APPLICATIONS *Low power audio amplifier *Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current Collector Power Dissipation Ta=25 Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range VALUE 100 80 7 3 6 1 1.5 UNIT V V V A A A PC W 12.5 150 -65~150 Ti Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(on) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Collector Capacitance CONDITIONS IC= 10mA; IB= 0 IC= 0.5 A ;IB= 50mA IC= 1.5A ;IB= 0.15 A B MJE182 MIN 80 MAX UNIT V 0.3 0.9 1.7 1.5 2.0 1.2 0.1 0.1 0.1 50 30 12 50 40 250 V V V V V V A mA A IC= 3A ;IB= 0.6 A IC= 1.5A; IB= 0.15A IC= 3A; IB= 0.6A B VCE= 1V; IC= 0.5A VCB= 100V; IE= 0 VCB= 100V; IE= 0;TC= 150 VEB= 7V; IC= 0 IC= 0.1 A ; VCE= 1V IC= 0.5A ; VCE= 1V IC= 1.5 A ; VCE= 1V IC= 0.1 A; VCE= 10V; IE= 0; VCB= 10V; ftest = 1.0MHz MHz pF isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE182 isc Websitewww.iscsemi.cn |
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